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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLV862 UHF linear push-pull power transistor
Product specification Supersedes data of 1997 Oct 14 1999 Jun 25
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * Double stage internal input and output matching networks for an optimum wideband capability and high gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.
5 3
Top view
MAM031
BLV862
PINNING PIN 1 2 3 4 5 Notes 1. Collectors 1 and 2 are connected together internally. 2. Common emitters are connected to the flange. SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1; note 1 collector 2; note 1 base 1 base 2 common emitter; note 2
handbook, halfpage
c1
1
2
b1 e
5 4
b2
c2
Fig.1 Simplified outline (SOT262B) and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) 28 PL (W) 150 Gp (dB) 8 typ. 9 C (%) 45 typ. 52 Gp (dB) 1
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1999 Jun 25
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 C CONDITIONS open emitter open base open collector - - - - - -65 - MIN.
BLV862
MAX. 65 30 3 25 350 +150 200 V V V A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink note 1 CONDITIONS Ptot = 350 W; note 1 VALUE 0.5 0.15 UNIT K/W K/W
102 handbook, halfpage
MBK231
handbook, halfpage
400
MGD528
IC (A)
Ptot (W) 300
(2) (1)
10
(2)
200
(1)
100
1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) 160
Total device; both sections equally loaded. (1) Tmb = 25 C. (2) Th = 70 C.
Total device; both sections equally loaded. (1) Continuous operation. (2) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1999 Jun 25
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
CHARACTERISTICS Values apply to either transistor section; Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE Cc Note 1. The value of Cc is that of the die only, it is not measurable because of the internal matching network. APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull class-AB test circuit; note 1. MODE OF OPERATION CW class-AB Note 1. See application note "AN98014 in handbook SC19b." Ruggedness in class-AB operation f (MHz) 860 VCE (V) 28 ICQ (A) 0.8 PL (W) 150 Gp (dB) 8 typ. 9 C (%) 45 typ. 52 PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain DC current gain ratio of both sections collector capacitance CONDITIONS IE = 0; IC = 60 mA IB = 0; IC = 150 mA IE = 3 mA; IC = 0 VCB = 28 V IC = 4.5 A; VCE = 10 V IC = 4.5 A; VCE = 10 V IE = ie= 0; VCE = 28 V; f = 1 MHz; note 1 MIN. 65 30 3 - 30 0.67 - - - - - - - 75 TYP.
BLV862
MAX. - - - 5 140 1.5 -
UNIT V V V mA - - pF
Gp (dB) 1
The BLV862 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A; PL = 150 W; Rth mb-h = 0.15 K/W.
1999 Jun 25
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
handbook, halfpage
12
MGD529
MGD530
60 C (%)
handbook, halfpage
240
Gp (dB)
Gp
PL (W) 160
8 C
40
4
20
80
0 0 40 80 120
0 160 200 PL (W)
0 0 10 20 PD (W) 30
Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A.
Th = 25 C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A.
Fig.4
Power gain and collector efficiency as functions of load power; typical values.
Fig.5
Load power as a function of drive power; typical values.
handbook, halfpage
-20
MGG812
handbook, halfpage
-20
MGG813
dim (dB) -30
dim (dB) -30
-40
-40
-50
-50
-60 0 100 200 300 400 500 Po sync (W)
-60 0 100 200 300 400 Po sync (W)
Th = 25 C; VCE = 28 V; ICQ = 0.8 A; 2-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB).
Th = 25 C; VCE = 28 V; ICQ = 0.8 A; 3-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB); fsound = 860.75 MHz (-10 dB).
Fig.6
Intermodulation distortion as a function of output power; typical values.
Fig.7
Intermodulation distortion as a function of output power; typical values.
1999 Jun 25
5
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R8 T2 P1 R7 R9 T1 C4 C19 R1 R2 R3 C1 50 input R4 R5 R6
Philips Semiconductors
pagewidth
UHF linear push-pull power transistor
+VCC = 28 V
,,,,,,, ,,,,,,, ,,,, ,,,,,,, ,,,,,,, ,,,,
C2 L9 L7 L1 L5 L3 B1 C5 C6 C7 C8 L2 L4 L6 C3 L8 L10
DUT
C9
,,, ,,, ,,,,, ,,,,,,,, ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,
L11 C11 L13 L15 L17 L19 C10 C12 C14 B2 L18 L20 L16 L14 C13 L12
C20
C15
C16
6
C18
50 output
C17
MGG811
Product specification
BLV862
Fig.8 Class-AB test circuit at f = 860 MHz.
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
handbook, full pagewidth
102
56
R7 R8 R9
X1
T1
C19 P1 C20
T2 C11
X2
B2 50 input C1 C3 C2 C16 R1 R2 R3 R4 R5 R6 C5,C6 C7,C8 C10 C9 BLV862 B1 C12 C13 C14 C15 C17 C18 50 output
C4
MBH775
Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.9 Printed-circuit board and component lay-out for the 860 MHz class-AB test circuit.
1999 Jun 25
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components COMPONENT C1 C2. C3 C4 C5, C7 C6, C8 C9, C10 C11, C13 C12 C14 C15 C16, C17 C18 C19 C20 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13, L14 L15, L16 L17, L18 L19, L20 B1 B2 R1, R6 R7 R9 P1 X1, X2 T1, T2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor solid aluminium capacitor Tekelec trimmer 1 nF 220 F; 16 V 1 to 5 pF VALUE
BLV862
DIMENSIONS CATALOGUE No. 2222 852 47102 2222 031 35221
multilayer ceramic chip capacitor; note 1 10 pF
multilayer ceramic chip capacitor; note 2 6.8 pF multilayer ceramic chip capacitor; note 3 10 pF multilayer ceramic chip capacitor; note 1 100 pF multilayer ceramic chip capacitor; note 1 8.2 pF multilayer ceramic chip capacitor; note 2 3.9 pF solid aluminium capacitor multilayer ceramic chip capacitor 100 F; 40 V 100 nF 2222 031 37101 2222 852 47104
multilayer ceramic chip capacitor; note 1 22 pF multilayer ceramic chip capacitor; note 1 100 pF multilayer ceramic chip capacitor stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 semi rigid coax balun UT70-25 semi rigid coax balun UT70-25 SMD resistor SMD resistor SMD resistor potentiometer copper ribbon hairpin NPN transistor BD139 9330 912 20112 15 nF 47 x 1.8 mm 2 x 5 mm 4 x 6 mm 4 x 8 mm 8.1 x 10 mm 15 x 2 mm 5 x 10 mm 10 x 8 mm 12.9 x 5 mm 48.7 x 1.8 mm Z = 25 1.5 47 mm Z = 25 1.5 48.7 mm 100 1 47 1.2 k 4.7 k 0805 0805 0805 0805 2122 118 03881 2122 118 04562 2122 118 04598 2122 118 04579 2222 852 47153
R2, R3, R4, R5, R8 SMD resistor
4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic (r = 2.55); thickness 0.5 mm.
1999 Jun 25
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
handbook, halfpage
4
MGG814
Zi
handbook, halfpage
3
MGG815
() 3
ZL () 2 xi 2 ri 1 1 0 0 XL RL
-1 400
500
600
700
800 900 f (MHz)
-1 400
500
600
700
800 900 f (MHz)
Th = 25 C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).
Th = 25 C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).
Fig.10 Input impedance (per section) as function of frequency (series components); typical values.
Fig.11 Load impedance (per section) as function of frequency (series components); typical values.
handbook, halfpage
16
MGG816
Gp (dB) 12
handbook, halfpage
8
Zi ZL
MBA451
4
0 400
500
600
700
800 900 f (MHz)
Th = 25 C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).
Fig.12 Power gain as a function of frequency; typical values.
Fig.13 Definition of transistor impedance.
1999 Jun 25
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLV862
SOT262B
D
A F D1
U1 q H1 C w2 M C M
B
c
1
2
H
U2
p
E1
E
5
A
3
b e
4
w3 M
w1 M A M B M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.39 4.62 b 8.51 8.25 c 0.16 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.28 3.02 Q 2.47 2.20 q 27.94 U1 34.17 33.90 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25
22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03
15.49 19.69 14.99 19.17 0.61 0.59
0.212 0.335 0.006 0.873 0.865 0.404 0.405 0.070 0.435 0.182 0.325 0.004 0.845 0.855 0.396 0.396 0.060
0.775 0.129 0.097 1.345 0.390 1.100 0.010 0.020 0.010 0.755 0.119 0.087 1.335 0.380
OUTLINE VERSION SOT262B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
1999 Jun 25
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV862
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 25
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 66
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/05/pp12
Date of release: 1999 Jun 25
Document order number:
9397 750 05708

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